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Samsung unveils industry’s first 12 nm-class DDR5 DRAM with speeds up to 7.2 Gbps

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Samsung 12 nm-class DDR5 (Source: Samsung Newsroom)
Samsung 12 nm-class DDR5 (Source: Samsung Newsroom)

Unveiled earlier today and set to enter the mass production stage next year, the industry’s first 12 nm-class DDR5 DRAM by Samsung aims to push forward computing, data center, and AI applications. Although not the fastest ones, these chips come with the industry’s highest die density, which allows a 20% higher wafer productivity.

In March, Samsung unveiled a 7.5 Gbps LPDDR5X DRAM solution, but only to push the bar higher in September with the industry’s fastest LPDDR5X DRAM. While the 8.5 Gbps record set then was not blown by today’s new solution, the 7.2 Gbps speed announced by Samsung for the new chips is nothing to be ashamed of. Since the industry’s first 12 nm-class comes with the highest die density so far, the wafer productivity has increased by 20%.

According to Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics, the 12 nm-range DRAM “will be a key enabler in driving market-wide adoption of DDR5 DRAM.” Furthermore, this technology is expected “to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems” by providing top performance and power efficiency.

Although mass production is set to begin in 2023, Samsung has already announced the completion of an important stage that precedes the launch of 12 nm DDR5-based products on the market, namely the evaluation for compatibility with AMD Zen platforms. In addition to the wafer productivity increase mentioned earlier, the 12 nm-class DRAM also comes with better efficiency. According to Samsung, this solution uses up to 23% less power than the previous generation.

Samsung has not revealed an accurate timeline, but based on the information revealed so far, it is very likely that the first 12 nm-class DRAM products will hit the market by mid-2023.

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